Contacts, documents and full notice history are available with a subscription.

Award Notice NONE 1 notice 1 document

Gallium Nitride Diode Wafer Fabrication 80GRC025PA002

Solicitation 80GRC025PA002 Copied Notice ID 165c6a35a4bd44bfa0192c6d226ec753 Copied NATIONAL AERONAUTICS AND SPACE ADMINISTRATION — NASA GLENN RESEARCH CENTER

SAM.gov

Posted

Sep 30, 2025

Deadline

No deadline

Set-aside

NONE

NAICS

334413

PSC

5961

Summary

AI-generated · Oct 08, 2025

Gallium Nitride diode wafer fabrication was awarded to Raytheon Company for $273,770. This was issued as a sole-source award, with the justification for not pursuing full and open competition made public after the award in accordance with FAR 6.305.

Intent to Sole-Source was posted under the same title using Notice ID 80GRC025CA030. The Justification for other than full and open competition (JOFOC) is made public after award in accordance with FAR 6.305.

From Award Notice posted on Sep 30, 2025

Notice history

Award Notice LATEST Posted Sep 30, 2025

Details

Solicitation number 80GRC025PA002

Notice ID 165c6a35a4bd44bfa0192c6d226ec753

Award number 80GRC025P0002

Notice type Award Notice

Product / Service (PSC) 5961

NAICS 334413

Set-aside No Set aside used

Place of performance Tewksbury, Massachusetts

Archive date Oct 29, 2025

Award Information

Awardee

Total Awarded

$273,770.00

Award Date

Sep 26, 2025

Award Notices

Gallium Nitride Diode Wafer Fabrication View Notice

Posted: Sep 30, 2025

Awardees

Company Name	UEI	CAGE Code	Location
RAYTHEON COMPANY	LWF3QUSCDNG1	0AYP7	Tewksbury, MA

Documents

Document 1

Contacts

primary

Ian Park

secondary

Hunter Butkovic

Agency

NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

NASA GLENN RESEARCH CENTER

Place of Performance

Tewksbury, Massachusetts
USA

Dates

Posted Sep 30, 2025 10 months ago

Last Updated Aug 06, 2026 2 days ago

Awarded Sep 26, 2025 10 months ago