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Special Notice Expired 1 notice

TECHNOLOGY/BUSINESS OPPORTUNITY Semiconductor Opening Switches with Pre-Pulses Elimination IL-13828

Solicitation IL-13828 Copied Notice ID 4b3fcc84d6e14a7dae513adee6106346 Copied ENERGY, DEPARTMENT OF — LLNS – DOE CONTRACTOR
SAM.gov
Posted
Jul 07, 2025
Deadline
Aug 07, 2025
Set-aside
None
NAICS
334413
PSC
N/A

Summary

AI-generated · Aug 25, 2025

LLNL is offering an opportunity to license and commercialize a novel Semiconductor Opening Switch (SOS) diode design that eliminates pre-pulses, improving peak voltage and rise time for high-power pulse generators used in pulsed-power applications such as lasers, X-ray, and neutron sources. The technology features a unique p+/p/n-base/n+ structure with an additional gradient-doped n-layer that suppresses pre-pulses, and has been validated in simulations; LLNL seeks industry partners capable of bringing this invention to the market under a licensing arrangement, with strict nondisclosure of proprietary information.

This is not a procurement. Interested companies should submit an electronic or written statement of interest providing the company name and address, a point of contact, and a description of relevant expertise or facilities for commercializing this technology. Submissions should reference the LLNL Technology/Business Opportunity and IL-13828 in the subject line or header and are directed to LLNL’s Innovation and Partnerships Office.

Opportunity: Lawrence Livermore National Laboratory (LLNL), operated by the Lawrence Livermore National Security (LLNS), LLC under contract no. DE-AC52-07NA27344 (Contract 44) with the U.S. Department of Energy (DOE), is offering the opportunity to enter into a collaboration to further develop its Semiconductor Open Switch with pre-pulses elimination. Background: A Semiconductor Opening Switch (SOS) is a high-power pulse diode designed to interrupt currents at density levels of up to 10 kA/cm2 in less than 10 nanoseconds. Current state of the art SOSs are widely used as solid-state generators to produce high power laser light, x-rays, and neutron pulses. One of their drawbacks however is that their performance is compromised by the presence of pre-pulses. These unwanted pulses feature long duration time and slow rise time, which degrades the voltage pulse rise time, peak voltage, etc. of the SOS device. There is a need for a different SOS device structure that is able to suppress or eliminate these pre-pulses. Description: LLNL developed a novel SOS diode structure starting with a n-type silicon wafer. On the appropriate sides of the wafer, donor and acceptor dopants with specifically designed and optimized concentration profiles are diffused in the structure. Crucially, an extra n-region is introduced to the structure to address pre-pulses. The result is a SOS diode with an optimized p+/p/n-base/n+ structure, and an extra layer that has a gradient n-doping. The incorporation of this layer effectively suppresses the pre-pulses, increases peak voltage and reduces pulse rise time. This approach has been validated in optimization simulations. Advantages/Benefits: Value Proposition: Improved performance of SOS diodes Vital for compact high voltage pulse generators Potential Applications: Pulsed-power physics Compact high voltage pulse generators High power electronics Development Status: Current stage of technology development: TRL ? 0-2 ? 3-5 ? 5-9 LLNL has filed for patent protection on this invention. LLNL is seeking industry partners with a demonstrated ability to bring such inventions to the market. Moving critical technology beyond the Laboratory to the commercial world helps our licensees gain a competitive edge in the marketplace. All licensing activities are conducted under policies relating to the strict nondisclosure of company proprietary information. Please visit the IPO website at https://ipo.llnl.gov/resources for more information on working with LLNL and the industrial partnering and technology transfer process. Note: THIS IS NOT A PROCUREMENT. Companies interested in commercializing LLNL's SOS with pre-pulses elimination should provide an electronic OR written statement of interest, which includes the following: Company Name and address. The name, address, and telephone number of a point of contact. A description of corporate expertise and/or facilities relevant to commercializing this technology. Please provide a complete electronic OR written statement to ensure consideration of your interest in LLNL's SOS with pre-pulses elimination. The subject heading in an email response should include the Notice ID and/or the title of LLNL s Technology/Business Opportunity and directed to the Primary and Secondary Point of Contacts listed below. Written responses should be directed to: Lawrence Livermore National Laboratory Innovation and Partnerships Office P.O. Box 808, L-779 Livermore, CA 94551-0808 Attention: IL-13828

From Special Notice posted on Jul 07, 2025

Notice history

1
  1. Special Notice LATEST Posted Jul 07, 2025

Details

Solicitation number IL-13828
Notice ID 4b3fcc84d6e14a7dae513adee6106346
Notice type Special Notice
NAICS 334413
Place of performance Livermore, California
Archive date Aug 22, 2025

Award Information

Not yet awarded

Documents

No files available

View on SAM.gov

Contacts

primary
Alex Hess

Email

Phone

secondary
Charlotte Eng

Email

Phone

Agency

ENERGY, DEPARTMENT OF
ENERGY, DEPARTMENT OF
LLNS – DOE CONTRACTOR

Place of Performance

Livermore, California
USA

Dates

Posted Jul 07, 2025 1 year ago
Last Updated Aug 06, 2026 2 days ago
Due Aug 07, 2025 1 year ago