Prospective Grant of Exclusive Patent License 12-009-EX1 NIST-OAAM-AMD-TPO-SN-26-09
Summary
AI-generated · Jun 17, 2026NIST is considering granting an exclusive license to Julia Jean LLC for NIST’s rights in a group of silicon carbide–based cold field electron emitter patents, including a provisional application (61/589,954) and issued patents 8,907,553 B2, 9,324,534 B2, and 9,558,907 B2. The prospective license would have worldwide territory and cover the field of use for research, development, manufacturing, and commercialization of licensed products.
The license would be royalty-bearing and issued under the applicable patent statutes and regulations (35 U.S.C. 209 and 37 CFR 404.7). Interested parties may submit written information or license applications for consideration within the process outlined in the notice, which includes a short window after publication.
U.S. DEPARTMENT OF COMMERCE National Institute of Standards and Technology Prospective Grant of Exclusive Patent License AGENCY: National Institute of Standards and Technology, Department of Commerce ACTION: Notice; prospective grant of exclusive patent license. SUMMARY: This is a notice in accordance with 35 U.S.C. 209(e) and 37 CFR 404.7(a)(1)(i) that the National Institute of Standards and Technology ( NIST ), U.S. Department of Commerce, is contemplating the grant to Julia Jean LLC, of Columbia Falls, Montana, of an exclusive license to NIST's interest in the inventions embodied in the following patents and patent applications: a. United States Provisional Patent Application Serial No. 61/589,954, filed January 24, 2012, and entitled, COLD CATHODE ELECTRON FIELD EMITTERS BASED ON SILICON CARBIDE STRUCTURES [NIST Reference no. 12-009]; b. United States Patent No. 8,907,553 B2, issued December 9, 2014, and entitled, COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES [NIST Reference no. 12-009]; c. United States Patent No. 9,324,534 B2, issued April 26, 2016, and entitled, COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES [Division of (b); NIST Reference no. 12-009D]; and d. United States Patent No. 9,558,907 B2, issued January 21, 2017, and entitled, COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES [Division of (c); NIST Reference no. 12-009D2]. The prospective exclusive license territory may be worldwide, and the field of use may be limited to the following: Research, Development, Manufacturing, and Commercialization of the Licensed Patent Rights for the creation of Licensed Products. FOR FURTHER INFORMATION, CONTACT: Patrick McCue, Patenting and Licensing Manager, National Institute of Standards and Technology, Technology Partnerships Office, 100 Bureau Drive, Stop 2200, Gaithersburg, MD 20899, or emailed to patrick.mccue@nist.gov. SUPPLEMENTARY INFORMATION: The prospective exclusive license will be royalty bearing and will comply with the terms and conditions of 35 U.S.C. 209 and 37 CFR 404.7. The prospective exclusive license may be granted unless, within fifteen (15) days from the date of this published Notice, NIST receives written evidence and argument which establish that the grant of the license would not be consistent with the requirements of 35 U.S.C. 209 and 37 CFR 404.7. Dates: Only written comments or applications for a license (or both) which are received by the NIST Technology Partnerships Office on or before July 1, 2026 will be considered. Bethany Loftin, Director, Technology Partnerships Office
From Special Notice posted on Jun 16, 2026Notice history
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Special Notice LATEST Posted Jun 16, 2026
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