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Special Notice NONE Expired 2 notices 1 document

Gallium Nitride Diode Wafer Fabrication 80GRC025CA030

Solicitation 80GRC025CA030 Copied Notice ID 684dd726afab4a9f8faab81cf60d225e Copied NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
SAM.gov
Posted
Jun 27, 2025
Deadline
Jul 14, 2025
Set-aside
NONE
NAICS
541715
PSC
AR11

Summary

AI-generated · Aug 23, 2025

GaN wafer fabrication is needed to produce a dedicated run of 7000 high-performance Schottky diodes for integration in high-power Rectenna arrays operating at 10 GHz and above. Diodes must meet stringent specifications (global cut-off frequency, return loss, junction capacitance, operational power handling, current handling, and high-temperature operation) and must already exist in the vendor’s catalog with measurements that satisfy the SOW; capability to deliver these devices within the required timeframe depends on their current availability. A sole-source award to Raytheon Advanced Technologies (FAR 6.302-1) is planned, with no expectation of a commercial product or service under FAR Part 12. Organizations may submit capabilities/qualifications to the designated NASA contact for consideration, and responses will be evaluated solely to determine whether to pursue competition later. Ombudsman information is available.

Two notices describe the same core requirement, with only administrative differences: the submission contact and deadline window differ between notices, but both indicate an intent to award a sole-source contract to Raytheon Advanced Technologies for the GaN diode wafer fabrication. No commitment to open competition is implied, and the government reserves discretion to decide whether to conduct a full and open competition based on the responses.

NASA Glenn Research Center (GRC) has a requirement for a dedicated Gallium Nitride wafer fabrication run to provide 7000 high performance Schottky diodes for integration in high power Rectenna arrays operating at 10 GHz and above. These diodes must meet highly specific qualifications and produce cutting edge performance to enable high-frequency, high-power and high-efficiency power rectification. The device performance requirements outlined in the Statement of Work include global cut-off frequency, return loss, junction capacitance, operational power handling, current handling, and high-temperature operation. These devices must already exist in the vendors catalog and device measurements meeting the SOW requirements must be currently available or else it wouldn t be possible to expect a competitor to deliver these devices with the stated performance within the required time frame. NASA GRC intends to issue a sole source contract to acquire the related capabilities as outlined in the attached Statement of Work from Raytheon Advanced Technologies of Tewksbury, MA under the authority of FAR 6.302-1, only one responsible source and no other supplies or services will satisfy agency requirements. The Government does not intend to acquire a commercial product or commercial service using FAR Part 12. Interested organizations may submit their capabilities and qualifications to perform the effort electronically via email to Hunter Butkovic (hunter.c.butkovic@nasa.gov) not later than 12:00pm ET on July 14, 2025. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether to conduct this acquisition on a competitive basis. A determination by the Government not to compete this acquisition on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the Government. NASA Clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at : https://www.hq.nasa.gov/office/procurement/regs/Procurement-Ombuds-Comp-Advocate-Listing.pdf

From Special Notice posted on Jun 27, 2025

NASA Glenn Research Center (GRC) has a requirement for a dedicated Gallium Nitride wafer fabrication run to provide 7000 high performance Schottky diodes for integration in high power Rectenna arrays operating at 10 GHz and above. These diodes must meet highly specific qualifications and produce cutting edge performance to enable high-frequency, high-power and high-efficiency power rectification. The device performance requirements outlined in the Statement of Work include global cut-off frequency, return loss, junction capacitance, operational power handling, current handling, and high-temperature operation. These devices must already exist in the vendors catalog and device measurements meeting the SOW requirements must be currently available or else it wouldn t be possible to expect a competitor to deliver these devices with the stated performance within the required time frame. NASA GRC intends to issue a sole source contract to acquire the related capabilities as outlined in the attached Statement of Work from Raytheon Advanced Technologies of Tewksbury, MA under the authority of FAR 6.302-1, only one responsible source and no other supplies or services will satisfy agency requirements. The Government does intend to acquire a commercial product or commercial service using FAR Part 12. Interested organizations may submit their capabilities and qualifications to perform the effort electronically via email to Ian Park (ian.park@nasa.gov) not later than 12:00pm ET on August 20, 2025. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether to conduct this acquisition on a competitive basis. A determination by the Government not to compete this acquisition on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the Government. NASA Clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at : https://www.hq.nasa.gov/office/procurement/regs/Procurement-Ombuds-Comp-Advocate-Listing.pdf

From Special Notice posted on Aug 13, 2025

Notice history

2
  1. Special Notice Posted Jun 27, 2025
  2. Special Notice LATEST Posted Aug 13, 2025
    • Description: Description was updated
    • Response Deadline: Jul 14, 2025Aug 20, 2025
    • NAICS Codes: 541715334413

Details

Solicitation number 80GRC025CA030
Notice ID 684dd726afab4a9f8faab81cf60d225e
Notice type Special Notice
Product / Service (PSC) AR11
NAICS 541715
Set-aside No Set aside used
Place of performance Tewksbury, Massachusetts
Archive date Jul 29, 2025

Award Information

Not yet awarded

Documents

1
View on SAM.gov

Contacts

primary
Hunter Butkovic

Email

secondary
Brianna Lindsey

Email

Agency

NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

Place of Performance

Tewksbury, Massachusetts 01876
USA

Dates

Posted Jun 27, 2025 1 year ago
Last Updated Aug 06, 2026 1 day ago
Due Jul 14, 2025 1 year ago