Dry etching of Combined Gallium Nitride Epitaxial Layer and Silicon Carbide Substrate 80NSSC26936816Q
Summary
AI-generated · Jul 07, 2026Dry etching of a combined gallium nitride epitaxial layer and silicon carbide substrate is required, with the full scope and deliverables described in the attached Statement of Work. Refer to the SOW for the complete requirements and tasks.
This is not a request for quotes; price offers received will not be reviewed or accepted at this time, and a price quote alone generally cannot establish a bidder’s technical capability. All correspondence should reference ID# to ensure visibility.
See the attached SOW. All correspondence should reference ID# to ensure visibility. *PLEASE NOTE* THIS IS NOT A REQUEST FOR QUOTES. ANY PRICE OFFERS RECIEVED WILL NOT BE REVIEWED / ACCEPTED AT THIS TIME. A price quote alone generally does not provide sufficient information to evaluate a vendor's technical capability.
From Solicitation posted on Jul 06, 2026Notice history
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