BACK-END-OF-LINE (BEOL) 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers 80GRC025R7012_Presoliciation_Synopsis

NASA Glenn Research Center (GRC) plans to issue a Request for Proposal (RFP) for Back-End-Of-Line (BEOL) 4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers. NASA is seeking fabrication of particular integrated SiC device structures (JFETs and resistors) via a particular fabrication process flow to the desired specifications on NASA-provided 100 mm diameter 4H-SiC epilayered wafers using NASA-provided device-layout design files. The Government does not intend to acquire a commercial product or commercial service using FAR Part 12. The NAICS Code and Size Standard are 541715 Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology) and 1,000 employees, respectively. The anticipated release date of the RFP is on or about June 27th, 2025 with an anticipated offer due date of on or about July 25th, 2025. All responsible sources may submit an offer which will be considered by the agency. NASA Clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at: https://www.hq.nasa.gov/office/procurement/regs/Procurement-Ombuds-Comp-Advocate-Listing.pdf If a solicitation is released, then it and any additional documents will be available on Sam.gov. It is the offeror's responsibility to monitor this website for the release of the solicitation and amendments (if any). Potential offerors will be responsible for downloading their own copy of the solicitation and amendments (if any). Prospective offerors are encouraged to notify this office of their intent to submit an offer. All contractual and technical questions must be submitted electronically via email to Claude David (claude.e.david@nasa.gov) not later than June 20th, 2025 @ 4pm ET. Telephone questions will not be accepted.