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Award Notice NONE 1 notice 1 document

4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers 80GRC025C0005

Solicitation 80GRC025C0005 Copied Notice ID 9ba87d892891435ebe83fe669581ba99 Copied NATIONAL AERONAUTICS AND SPACE ADMINISTRATION — NASA GLENN RESEARCH CENTER

SAM.gov

Posted

Sep 29, 2025

Deadline

No deadline

Set-aside

NONE

NAICS

541715

PSC

AR11

Summary

AI-generated · Oct 09, 2025

Procure and perform processing of 4H-SiC silicon carbide integrated circuits on 100 mm diameter SiC wafers, covering the fabrication steps needed to produce IC devices on 4H-SiC material.

General Electric Company was awarded the contract for this work, with the attached Source Selection Statement providing the justification and evaluation details behind the award.

See the attached Source Selection Statement

From Award Notice posted on Sep 29, 2025

Notice history

Award Notice LATEST Posted Sep 29, 2025 View

Details

Solicitation number 80GRC025C0005

Notice ID 9ba87d892891435ebe83fe669581ba99

Award number 80GRC025C0005

Notice type Award Notice

Product / Service (PSC) AR11

NAICS 541715

Set-aside No Set aside used

Place of performance Niskayuna, New York

Archive date Oct 03, 2025

Award Information

Awardee

Total Awarded

$340,317.00

Award Date

Sep 18, 2025

Award Notices

4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers View Notice

Posted: Sep 29, 2025

See the attached Source Selection Statement

Awardees

Company Name	UEI	CAGE Code	Location
General Electric Company	M2FYKG7HP723	28339	Niskayuna, NY

Documents

Document 1

Contacts

primary

Claude David

secondary

Brianna Lindsey

Agency

NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

NASA GLENN RESEARCH CENTER

Place of Performance

Niskayuna, New York 12309
USA

Dates

Posted Sep 29, 2025 10 months ago

Last Updated Aug 06, 2026 1 day ago

Awarded Sep 18, 2025 10 months ago